说唱英文-偶像的意思
Acceptor - An element, such as boron,
indium, and gallium used to create a free hole in
a
semiconductor. The acceptor atoms are
required to have one less valence electron than
the
semiconductor.
受主 -
一种用来在半导体中形成空穴的元素,比如硼、铟和镓。受主原子必须比半导体元
素少一价电子
Alignment Precision - Displacement of patterns
that occurs during the photolithography process.
套准精度 - 在光刻工艺中转移图形的精度。
Anisotropic - A
process of etching that has very little or no
undercutting
各向异性 - 在蚀刻过程中,只做少量或不做侧向凹刻。
Area Contamination - Any foreign particles or
material that are found on the surface of a wafer.
This is viewed as discolored or smudged, and
it is the result of stains, fingerprints, water
spots, etc.
沾污区域 -
任何在晶圆片表面的外来粒子或物质。由沾污、手印和水滴产生的污染。
Azimuth, in
Ellipsometry - The angle measured between the
plane of incidence and the major axis
of the
ellipse.
椭圆方位角 - 测量入射面和主晶轴之间的角度。
Backside - The bottom surface of a silicon
wafer. (Note: This term is not preferred; instead,
use
?back surface?.)
背面 -
晶圆片的底部表面。(注:不推荐该术语,建议使用“背部表面”)
Base Silicon
Layer - The silicon wafer that is located
underneath the insulator layer, which
supports
the silicon film on top of the wafer.
底部硅层 -
在绝缘层下部的晶圆片,是顶部硅层的基础。
Bipolar - Transistors
that are able to use both holes and electrons as
charge carriers.
双极晶体管 - 能够采用空穴和电子传导电荷的晶体管。
Bonded Wafers - Two silicon wafers that have
been bonded together by silicon dioxide, which
acts
as an insulating layer.
绑定晶圆片 -
两个晶圆片通过二氧化硅层结合到一起,作为绝缘层。
Bonding Interface -
The area where the bonding of two wafers occurs.
绑定面 - 两个晶圆片结合的接触区。
Buried Layer - A path
of low resistance for a current moving in a
device. Many of these dopants
are antimony and
arsenic.
埋层 - 为了电路电流流动而形成的低电阻路径,搀杂剂是锑和砷。
Buried Oxide Layer (BOX) - The layer that
insulates between the two wafers.
氧化埋层(BOX) -
在两个晶圆片间的绝缘层。
Carrier - Valence holes
and conduction electrons that are capable of
carrying a charge through a
solid surface in a
silicon wafer.
载流子 - 晶圆片中用来传导电流的空穴或电子。
Chemical-Mechanical Polish (CMP) - A process
of flattening and polishing wafers that utilizes
both chemical removal and mechanical buffing.
It is used during the fabrication process.
化学-机械抛光(CMP) -
平整和抛光晶圆片的工艺,采用化学移除和机械抛光两种方式。此
工艺在前道工艺中使用。
Chuck Mark - A mark found on either surface of
a wafer, caused by either a robotic end effector,
a
chuck, or a wand.
卡盘痕迹 -
在晶圆片任意表面发现的由机械手、卡盘或托盘造成的痕迹。
Cleavage Plane -
A fracture plane that is preferred.
解理面 - 破裂面
Crack - A mark found on a wafer that is
greater than 0.25 mm in length.
裂纹 -
长度大于0.25毫米的晶圆片表面微痕。
Crater - Visible under
diffused illumination, a surface imperfection on a
wafer that can be
distinguished individually.
微坑 - 在扩散照明下可见的,晶圆片表面可区分的缺陷。
Conductivity
(electrical) - A measurement of how easily charge
carriers can flow throughout a
material.
传导性(电学方面) - 一种关于载流子通过物质难易度的测量指标
。
Conductivity Type - The type of charge
carriers in a wafer, such as “N-type” and
“P-type”.
导电类型 - 晶圆片中载流子的类型,N型和P型。
Contaminant, Particulate (see light point
defect)
污染微粒
(参见光点缺陷)
Contamination
Area - An area that contains particles that can
negatively affect the characteristics
of a
silicon wafer.
沾污区域 - 部分晶圆片区域被颗粒沾污,造成不利特性影响。
Contamination Particulate - Particles found on
the surface of a silicon wafer.
沾污颗粒 -
晶圆片表面上的颗粒。
Crystal Defect - Parts of the
crystal that contain vacancies and dislocations
that can have an impact
on a circuit?s
electrical performance.
晶体缺陷 -
部分晶体包含的、会影响电路性能的空隙和层错。
Crystal Indices
(see Miller indices)
晶体指数
(参见米勒指数)
Depletion Layer - A region on a wafer that
contains an electrical field that sweeps out
charge
carriers.
耗尽层 -
晶圆片上的电场区域,此区域排除载流子。
Dimple - A concave
depression found on the surface of a wafer that is
visible to the eye under the
correct lighting
conditions.
表面起伏 - 在合适的光线下通过肉眼可以发现的晶圆片表面凹陷。
Donor - A contaminate that has donated extra
“free” electrons, thus making a wafer “N-Type”.
施主 - 可提供“自由”电子的搀杂物,使晶圆片呈现为N型。
Dopant - An
element that contributes an electron or a hole to
the conduction process, thus altering
the
conductivity. Dopants for silicon wafers are found
in Groups III and V of the Periodic Table of
the Elements.
搀杂剂 -
可以为传导过程提供电子或空穴的元素,此元素可以改变传导特性。晶圆片搀杂
剂可以在元素周期表的III 和 V族元素中发现。
Doping - The
process of the donation of an electron or hole to
the conduction process by a dopant.
掺杂 -
把搀杂剂掺入半导体,通常通过扩散或离子注入工艺实现。
Edge Chip and
Indent - An edge imperfection that is greater than
0.25 mm.
芯片边缘和缩进 - 晶片中不完整的边缘部分超过0.25毫米。
Edge Exclusion Area - The area located between
the fixed quality area and the periphery of a
wafer.
(This varies according to the
dimensions of the wafer.)
边缘排除区域 -
位于质量保证区和晶圆片外围之间的区域。(根据晶圆片的尺寸不同而有
所不同。)
Edge Exclusion, Nominal (EE) - The distance
between the fixed quality area and the periphery
of a
wafer.
名义上边缘排除(EE) -
质量保证区和晶圆片外围之间的距离。
Edge Profile - The edges of
two bonded wafers that have been shaped either
chemically or
mechanically.
边缘轮廓 -
通过化学或机械方法连接起来的两个晶圆片边缘。
Etch - A process
of chemical reactions or physical removal to rid
the wafer of excess materials.
蚀刻 -
通过化学反应或物理方法去除晶圆片的多余物质。
Fixed Quality
Area (FQA) - The area that is most central on a
wafer surface.
质量保证区(FQA) - 晶圆片表面中央的大部分。
Flat - A section of the perimeter of a wafer
that has been removed for wafer orientation
purposes.
平边 - 晶圆片圆周上的一个小平面,作为晶向定位的依据。
Flat Diameter - The measurement from the
center of the flat through the center of the wafer
to the
opposite edge of the wafer.
(Perpendicular to the flat)
平口直径 -
由小平面的中心通过晶圆片中心到对面边缘的直线距离。
Four-Point Probe -
Test equipment used to test resistivity of wafers.
四探针 - 测量半导体晶片表面电阻的设备。
Furnace and Thermal
Processes - Equipment with a temperature gauge
used for processing wafers.
A constant
temperature is required for the process.
炉管和热处理 - 温度测量的工艺设备,具有恒定的处理温度。
Front Side -
The top side of a silicon wafer. (This term is not
preferred; use front surface instead.)
正面 -
晶圆片的顶部表面(此术语不推荐,建议使用“前部表面”)。
Goniometer - An
instrument used in measuring angles.
角度计 -
用来测量角度的设备。
Gradient, Resistivity (not
preferred; see resistivity variation)
电阻梯度
(不推荐使用,参见“电阻变化”)
Groove - A scratch that
was not completely polished out.
凹槽 -
没有被完全清除的擦伤。
Hand Scribe Mark - A marking that
is hand scratched onto the back surface of a wafer
for
identification purposes.
手工印记 -
为区分不同的晶圆片而手工在背面做出的标记。
Haze - A mass
concentration of surface imperfections, often
giving a hazy appearance to the wafer.
雾度 -
晶圆片表面大量的缺陷,常常表现为晶圆片表面呈雾状。
Hole - Similar to a
positive charge, this is caused by the absence of
a valence electron.
空穴 - 和正电荷类似,是由缺少价电子引起的。
Ingot - A cylindrical solid made of
polycrystalline or single crystal silicon from
which wafers are
cut.
晶锭 -
由多晶或单晶形成的圆柱体,晶圆片由此切割而成。
Laser Light-
Scattering Event - A signal pulse that locates
surface imperfections on a wafer.
激光散射 -
由晶圆片表面缺陷引起的脉冲信号。
Lay - The main
direction of surface texture on a wafer.
层 -
晶圆片表面结构的主要方向。
Light Point Defect (LPD) (Not
preferred; see localized light-scatterer)
光点缺陷(LPD) (不推荐使用,参见“局部光散射”)
Lithography -
The process used to transfer patterns onto wafers.
光刻 - 从掩膜到圆片转移的过程。
Localized Light-
Scatterer - One feature on the surface of a wafer,
such as a pit or a scratch that
scatters
light. It is also called a light point defect.
局部光散射 - 晶圆片表面特征,例如小坑或擦伤导致光线散射,也称为光点缺陷。
Lot - Wafers of similar sizes and
characteristics placed together in a shipment.
批次 - 具有相似尺寸和特性的晶圆片一并放置在一个载片器内。
Majority
Carrier - A carrier, either a hole or an electron
that is dominant in a specific region, such
as
electrons in an N-Type area.
多数载流子 -
一种载流子,在半导体材料中起支配作用的空穴或电子,例如在N型中是电
子。
Mechanical Test Wafer - A silicon wafer used
for testing purposes.
机械测试晶圆片 - 用于测试的晶圆片。
Microroughness - Surface roughness with
spacing between the impurities with a measurement
of
less than 100 μm.
微粗糙 -
小于100微米的表面粗糙部分。
Miller Indices, of a
Crystallographic Plane - A system that utilizes
three numbers to identify plan
orientation in
a crystal.
Miller索指数 -
三个整数,用于确定某个并行面。这些整数是来自相同系统的基本向量。
Minimal
Conditions or Dimensions - The allowable
conditions for determining whether or not a
wafer is considered acceptable.
最小条件或方向 -
确定晶圆片是否合格的允许条件。
Minority Carrier - A carrier,
either a hole or an electron that is not dominant
in a specific region,
such as electrons in a
P-Type area.
少数载流子 -
在半导体材料中不起支配作用的移动电荷,在P型中是电子,在N型中是空
穴。
Mound
- A raised defect on the surface of a wafer
measuring more than 0.25 mm.
堆垛 -
晶圆片表面超过0.25毫米的缺陷。
Notch - An indent on the
edge of a wafer used for orientation purposes.
凹槽 - 晶圆片边缘上用于晶向定位的小凹槽。
Orange Peel
- A roughened surface that is visible to the
unaided eye.
桔皮 - 可以用肉眼看到的粗糙表面
Orthogonal Misorientation -
直角定向误差 -
Particle - A small piece of material found on
a wafer that is not connected with it.
颗粒 -
晶圆片上的细小物质。
Particle Counting - Wafers that
are used to test tools for particle contamination.
颗粒计算 - 用来测试晶圆片颗粒污染的测试工具。
Particulate
Contamination - Particles found on the surface of
a wafer. They appear as bright points
when a
collineated light is shined on the wafer.
颗粒污染 - 晶圆片表面的颗粒。
Pit - A non-removable
imperfection found on the surface of a wafer.
深坑 - 一种晶圆片表面无法消除的缺陷。
Point Defect - A
crystal defect that is an impurity, such as a
lattice vacancy or an interstitial atom.
点缺陷
- 不纯净的晶缺陷,例如格子空缺或原子空隙。
Preferential Etch -
优先蚀刻 -
Premium Wafer - A wafer that can
be used for particle counting, measuring pattern
resolution in
the photolithography process,
and metal contamination monitoring. This wafer has
very strict
specifications for a specific
usage, but looser specifications than the prime
wafer.
测试晶圆片 - 影印过程中用于颗粒计算、测量溶解度和检测金属污染的晶圆片。对
于具体
应用该晶圆片有严格的要求,但是要比主晶圆片要求宽松些。
Primary
Orientation Flat - The longest flat found on the
wafer.
主定位边 - 晶圆片上最长的定位边。
Process Test
Wafer - A wafer that can be used for processes as
well as area cleanliness.
加工测试晶圆片 -
用于区域清洁过程中的晶圆片。
Profilometer - A tool that is
used for measuring surface topography.
表面形貌剂
- 一种用来测量晶圆片表面形貌的工具。
Resistivity (Electrical)
- The amount of difficulty that charged carriers
have in moving throughout
material.
电阻率(电学方面) - 材料反抗或对抗电荷在其中通过的一种物理特性。
Required - The minimum specifications needed
by the customer when ordering wafers.
必需 -
订购晶圆片时客户必须达到的最小规格。
Roughness - The
texture found on the surface of the wafer that is
spaced very closely together.
粗糙度 -
晶圆片表面间隙很小的纹理。
Saw Marks - Surface
irregularities
锯痕 - 表面不规则。
Scan
Direction - In the flatness calculation, the
direction of the subsites.
扫描方向 -
平整度测量中,局部平面的方向。
Scanner Site Flatness -
局部平整度扫描仪 -
Scratch - A mark that is found
on the wafer surface.
擦伤 - 晶圆片表面的痕迹。
Secondary Flat - A flat that is smaller than
the primary orientation flat. The position of this
flat
determines what type the wafer is, and
also the orientation of the wafer.
第二定位边 -
比主定位边小的定位边,它的位置决定了晶圆片的类型和晶向。
Shape -
形状
-
Site - An area on the front surface of the
wafer that has sides parallel and perpendicular to
the
primary orientation flat. (This area is
rectangular in shape)
局部表面 -
晶圆片前面上平行或垂直于主定位边方向的区域。
Site Array - a
neighboring set of sites
局部表面系列 - 一系列的相关局部表面。
Site Flatness -
局部平整 -
Slip - A
defect pattern of small ridges found on the
surface of the wafer.
划伤 - 晶圆片表面上的小皱造成的缺陷。
Smudge - A defect or contamination found on
the wafer caused by fingerprints.
污迹 -
晶圆片上指纹造成的缺陷或污染。
Sori -
Striation -
Defects or contaminations found in the shape of a
helix.
条痕 - 螺纹上的缺陷或污染。
Subsite, of a
Site - An area found within the site, also
rectangular. The center of the subsite must be
located within the original site.
局部子表面 -
局部表面内的区域,也是矩形的。子站中心必须位于原始站点内部。
Surface
Texture - Variations found on the real surface of
the wafer that deviate from the reference
surface.
表面纹理 - 晶圆片实际面与参考面的差异情况。
Test Wafer - A silicon wafer that is used in
manufacturing for monitoring and testing purposes.
测试晶圆片 - 用于生产中监测和测试的晶圆片。
Thickness of Top
Silicon Film - The distance found between the face
of the top silicon film and the
surface of the
oxide layer.
顶部硅膜厚度 - 顶部硅层表面和氧化层表面间的距离。
Top Silicon Film - The layer of silicon on
which semiconductor devices are placed. This is
located
on top of the insulating layer.
顶部硅膜 - 生产半导体电路的硅层,位于绝缘层顶部。
Total
Indicator Reading (TIR) - The smallest distance
between planes on the surface of the wafer.
总计指示剂数(TIR) - 晶圆片表面位面间的最短距离。
Virgin Test
Wafer - A wafer that has not been used in
manufacturing or other processes.
原始测试晶圆片 -
还没有用于生产或其他流程中的晶圆片。
Void - The lack of any
sort of bond (particularly a chemical bond) at the
site of bonding.
无效 - 在应该绑定的地方没有绑定(特别是化学绑定)。
Waves - Curves and contours found on the
surface of the wafer that can be seen by the naked
eye.
波浪 - 晶圆片表面通过肉眼能发现的弯曲和曲线。
Waviness -
Widely spaced imperfections on the surface of a
wafer.
波纹 - 晶圆片表面经常出现的缺陷。
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