potential是什么意思微电子专业英语部分翻译第二章

2021年1月19日发(作者：吃的)
第二章

67
页

2.1.1

The essential structure of a BJT is represented in Figure 2-1(a).
双极性晶体管的基本结构如图
2-1
（
a
）所示。

The very earliest such devices had structures literally of this kind.
早期器件就具有上面所说的这种的结构。

Two closely spaced junctions were created by crystal-growth methods,
and a “bar” or
parallelepiped was then cut out of the germanium crystal.
两个紧密间隔开的结是由晶体生长方法产生，和一个“杆”或 平行六面体，然后
切出锗晶体。

Electrical leads were attached to it (an enormous challenge!) and the result was a BJT.
For
reasons
that
will
be
explained
shortly,
these
electrical
terminals
are
given
the
names, respectively from left to right, emitter, base, and conductor.
导 线被连接到结（一个巨大的挑战！
）
，结果是一个
BJT
（
双极性晶 体管）
。将要
简短解释的原因，这些电气端子被赋予名称，分别由左到右，发射极，基极，和< br>集电极。

These names were chosen with an eye to distinctive initial letters, which are displayed
in Figure 2-1(a) in association with the three terminals.
这三个极用三个独特的字母表示（
E
、
B
、
C
）
，如图
2-1
（
a
）所 示。

The shaded regions in Figure 2-1(a) represent the space-charge regions (or depletion
regions) of a pair of NP junctions.
图
2 -1
（
a
）中的阴影区表示一对的
NP
结的空间电荷区（或耗尽区）
。

The boundaries of these regions are emphasized because conditions there assume far
greater importance than conditions at the metallurgical junctions (which are not even
represented in the drawing).
强调这些区域的边界
,
因为那里的条件假定比在冶金结（其中甚至没有在图中表
示）的条件更为重要。

69
页

2.1.1 The portions of…

The portions of the BJT structure shown in Figure 2-2 that are near the top and the
bottom
of
the
diagram
also
are
to
some
degree
“
parasitic.
”

(For
a
more
usual
orientation of the diagram with the silicon surface horizontal, these regions would be
described as lateral portions of the structure.)

双极结型晶体管的结构如图
2-2
所示
,

,
在图 的顶部与底部附近也在一定程度上
“
寄生。
”(
更常用的定向图的硅表面水平
,
这些区域将被描述为结构的横向部分
)
。

It
is
a
curious
fact
that
advancing
technology
is
now
generating
structures
that
eliminate
the
parasitic
lateral
regions,
thus
increasingly
resembling
the
original
bar
structure!
一个令人好奇的事实是随着技术进步现在已经产生了消除寄生横向区域 的结构，
因而越来越类似于原来的杆状结构！

These
BJTs
are
not
freestanding
parallelepipeds,
but
rather
are
defined
by
parallel
grooves
cut
into
a
silicon
crystal,
and
then
subsequently
filled
by
an
insulating
material such as silicon dioxide (SiO
2
) .
这些
双极性晶体管< br>不是独立的平行六面体，
而是由切割成硅晶体平行槽限定，
并
且随后用绝缘材料 填充，如二氧化硅（
SiO
2
）
。

The individual BJTs are interconnected to perform useful circuit functions by means
of a variety of methods; the result is an integrated circuit that may incorporate over
100 000 devices all fabricated simultaneously in the same silicon crystal.
各个双极性晶体管通过多种方法的方式互连来执行有用的电路功能
;
其结果是一
个集成电路，它在同一个硅晶体上同时集成了超过
100000
个器件。

70
页

2.1.2 An input port…

An input port or an output port in the circuit sense consists of a pair of terminals.

电路中输入端口或输出端口包含一对端子的。

Since the BJT is a three-terminal device, one of the three terminals is permitted to be
common to the input and output puns, and the other two terminals are each uniquely
associated with each port.

由于
BJT
是三端子器件，
三个端子中的一个允许成为输入和输出 的共用的端子，
而另外两个端子分别唯一地与每个端口相关联。

For reasons that we shall examine, when the base and emitter terminals are chosen for
the input port with the collector and emitter terminals
taken for the output port, the
BJT can exhibit both current gain and voltage gain.
我们 将研究其原因，
当选择基极与发射极作为输入端口的集电极，
同时集电极和
发射极作为 输出端口，这个双极性晶体管可以呈现出电流增益和电压增益。

This
useful
combination
of
properties
has
made
the
common-
emitter
configuration
the
most
widely
used
of
the
several
possibilities,
a
term
acknowledging
that
the
emitter terminal is common to the input and output ports.

这个有用的性能组合为共发射极结构的最广泛使用提供了可能性，
术语承认发射极端是共同的输入和输出端口。

T
he adjective “ground ed
-emitter
形容词“接地的发射”有时也被用来形容该连接。


74
页

2.1.3 The most important…

The most important of the secondary currents in the one labeled I
B
，
the base- terminal
current.

二级电流中最重要的一个电流用
I
B
标记，即基集端子电流。

It
differs
in
numerous
and
major
ways
from
the
primary
electron
current
that
has
occupied us up to this point:

它在数量上和主要方式上不同于主要电流，原因在于下述几点：

First, it is a majority-carrier current, or a hole current in the NPN device.
首先，它是
NPN
器件的多数载流子电流或空穴电流。

Second, it flows laterally from the base contact into the active region of the BJT.
第二，它横向地从晶体管的基区向活动区域流动。

Refer
back
to
Figure
2-2,
which
shows
the
commonplace
(diffused)
BJT
in
a
relatively realistic cross section.

回到图
2-2
，图中给出了在实际中交叉区域的常见（扩散）晶体管。

The portion of
the base region contiguous with (or “under
region is the
active base region, sometimes also termed the intrinsic base region. (This use of the
term does not have doping connotations.)


基区邻接（或“下”
） 的发射区的部分是有源基区，
有时也认为是本征基区（在
实际能级应用中不具有掺杂的特点）< br>。

The outer portions of the base region, in analogous fashion, are sometimes designated
by the adjective extrinsic. It is there that the base contact is made in this kind of BIT.
(Base contacts , by the way, can be and often are made on both sides of the emitter)

在类似结构中，
基区的外接端有时特制为非本征情况，
这种晶体管的基极接 触如
是制备（顺便说，基极接触能够并通常制备在发射极的两侧）
。

The third major distinction of the base current from the primary electron current thus
becomes evident.

第三是来自主要电流的基极电流的差别变得很明显。

The
current
of
holes
traverses
a
relatively
long
path
within
the
base
region.
In
the
example we are considering it could be several tens of micrometers, as compared to
the less- than-one-micrometer base thickness traversed by the electrons.
空穴电流在基区传输了一段相对较长的距离，
在所给例子中与 电子移动的少于一
微米的基区厚度相比，我们认为空穴移动了几十微米。


78
页

2.1.4 Returning now…

Returning now to the modern transistor, we stress that I
B
is very nearly equal to the
current of holes being injected into the emitter.

现在返回到现代晶体管，
我们强调的是，
I
B
是非常接近于被注入到发射极的空穴
电流。

This brings us to a second efficiency factor,
γ
E
, one that is of great importance in
the modern BJT .
这给我们带来了第二个有效因子，
γ
E
，这个因子在现代
BJT
非常重要。

It can be defined as

它可以被定义为

γ
E
≡
(I
nE
/ I
E
) =(I
e
- I
pE
)/I
E
= I - (I
pE
/ I
E
)


(2-1)
where I
nE
and I
pE
are, respectively, the electron current being injected the base region
by the emitter junction and the hole current being injected into the emitter region by
the same junction.

式中
I
nE
I
pE< br>分别代表发射结注入到基区的电子电流和从发射结注入到基区的空穴
电流

The total emitter-junction current is inevitably equal to the emitter-terminal current I
E
.

总的发射结电流必然等于发射端电流
I
E
。

In a
the base region.
在完美发射极中，所有的发射极电流由注入到基区的电子组成。

From this point of view I
pE
(the current of holes injected into the emitter region) is a
defect current, a description sometimes used.

按照 这个观点，
I
pE
（注入到发射极区的空穴电流）
是一个亏损电流——我们有 时
使用这一描述。

The adjective
current
of
holes
plays
the
critical
role
of
the
control
current,
and
as
such
is
a
vital
factor
in
BJT
design
and
operation,
rather
than
a
factor
to
be
eliminated
as
the
potentially misleading term
“
defect current
”
may suggest.
“
完美
”
这个形容词被置于引号之中，是由于“亏损电流”
（空穴注入电流） 这个
术语易被误解为应该消除因子，
其实空穴注入电流在控制电流中起到了至关重要
的 作用，且这也是双极性晶体管工作机理与设计中的重要因素。


81
页

2.1.5 In the silicon…

In
the
silicon
BJT
we
may
safely
neglect
for
a
wide
range
of
purposes
the
two
parasitic internal currents, namely, the base- recombination current and the collector-
leakage
current.
Thus
the
admittedly
complex
pattern
of
Figure
2-4
reduces
to
the
much simpler pattern of Figure 2-7.
在硅晶体管中 我们确实忽略了在宽的作用区域内的两个无源内部电流，
也就是基
区复合电流和集电极漏电流。 这个图
2-4
中公认的复杂模式可以简化为图
2-7
中
模式。

Even
here,
however,
there
remains
the
complexity
of
the
base
current's
two-dimensional
pattern,
a
complication
that
may
be
neglected
for
a
small
ratio
of
base current to electron current, as was noted earlier.
不管如何，< br>仍然存在基区电流的二维模型的组成，
这个复杂的模型中如前面所提，
可以忽略基区电流 与总电流的小的比值。


84
页

2.1.6 While the…

While
the
transport- form
reformulation
was
a
significant
contribution,
the
Gummel-Poon paper went well beyond it. Their primary interests were (1) dynamic
modeling for (2) computer analysis of BJTs, (3) incorporating realistic properties.
当运输模式的整理是有意义的工作时，
Gummel-Poon
理论较好地符合实际情 况。
他们所关心的问题：
（
1
）动态模式（
2
）晶体管的计 算机处理分析（
3
）实际复合
特性

Setting aside idealized devices,
they
wanted their model to
deal
with
such items
as
emitter
crowding,
the
Early
effect,
the
Sah-Noyce-Shockley
effect
(space-charge-
region recombination), the Webster-Rittner effect, and the Kirk effect.
假定一个理想的器件，他们要用这个模型解决如发射极集聚，早期效应，
Sah-Noyce- Shockley
效应（空间电荷区复合）
，
Webster- Rittner
效应，和
Kirk
效
应。


86
页

2.1.7 The emitter, base…

1.
The
emitter,
base,
and
collector
regions
individually
are
uniformly
doped.
This
requires that the junctions be step junctions.
发射、基极和集电极区分别是均匀掺杂，而且需要
PN
结都是突变结；

2. In the base and collector regions the doping is extrinsic but nondegenerate.
在基极和集电极取掺杂是非本征且非简并的

3. If the emitter- region doping is degenerate, the region can nonetheless be described
by
the
conventional
semiconductor
equations
by
employing
empirically
adjusted
values of quantities such as diffusivity and intrinsic density.

如果发射区掺杂是简并，
掺杂区域不管怎 样可通过应用经验修正数量值
（如扩散
和本征密度）的常规半导体公式来描述；

4. In the base and collector regions, carrier lifetime is high.